Improved hole injection/extraction using PEDOT:PSS interlayer coated onto high temperature annealed ITO electrode for efficient device performances
نویسندگان
چکیده
We demonstrate the improved device performances by using structure of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) film coated onto indium tin oxide (ITO) anodic electrode annealed at 400 °C under normal ambient. The ITO thin films show quality with decreased dislocation density and lattice strain as annealing temperature increases. spin-coated PEDOT:PSS smoothens wrinkle kind surface morphology °C. (400 °C) interlayer improves hole-current in hole-only devices (HODs) having ITO/PEDOT:PSS/N,N′-Bis(3-methylphenyl)-N,N′-diphenylbenzidine hole-transporting layer/Al. It enhances efficiency organic photovoltaic [ITO (annealed)/PEDOT:PSS/P3HT:PCBM (active layer)/LiF/Al] three times higher (1.69 %) when compared to that (0.48 pristine based OPV device. These results high ambient lowers potential energy barrier ITO/PEDOT:PSS interface for effective hole injection/extraction process, resulting enhanced electrical performances.
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ژورنال
عنوان ژورنال: Superlattices and Microstructures
سال: 2021
ISSN: ['0749-6036', '1096-3677']
DOI: https://doi.org/10.1016/j.spmi.2021.106953